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NTE3882 2SC39 UGF8CT 19TR0A24 AT45DB 1N3502 MN3718FE 106NF24
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  for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 1 hmc789st89e ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz v01.0710 general description features functional diagram the h mc 789 s t89 e is a high linearity gaas i nga p hbt gain block mmic operating from 0.7 to 2.8 ghz and packaged in an industry standard so t89 package. utilizing a minimum number of external components and a single +5 v supply, the amplifer output ip 3 can be optimized to +45 dbm. the high output ip 3 and high gain make the h mc 789 s t89 e ideal for use in p a driver & pre-driver applications in c ellular/4g and f ixed wireless. high o utput ip 3: +42 dbm high o utput p 1db: +25 dbm high gain: 18 db s ingle s upply: +5 v 45% p a e @ +25 dbm p out i ndustry s tandard so t89 p ackage electrical specifcations, t a = +25c, vs= +5v [1] typical applications the h mc 789 s t89 e is ideal for: ? c ellular/4g ? f ixed wireless & w l a n ? c at v , c able m odem & db s ? m icrowave r adio & test e quipment ? if & rf applications p arameter min. typ. max. min. typ. max. min. typ. max. units f requency r ange 810 - 960 1710 - 1990 2420 - 2700 mhz gain 17 18 12 13.5 10 11 db gain v ariation o ver temperature 0.01 0.01 0.01 db / c input r eturn loss 12 12 10 db output r eturn loss 20 15 10 db output p ower for 1db c ompression ( p1db) 21 23.5 23 25 22 24 dbm s aturated output p ower ( psat) 25.5 27 26 dbm o utput third o rder i ntercept (ip3) [2] 42 42 42 dbm noise f igure 3.8 3.8 3.8 db s upply c urrent (icq) 125 150 125 150 125 150 ma [1] s pecifcations and data refect hmc789s t89e measured using the respective application circuits for each designated frequency band found herein. c ontact the h mc applications group for assistance in optimizing performance for your application. [2] two-tone output power of +10 dbm per tone, 1 m hz spacing.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 2 input return loss vs. temperature @ 900 mhz output return loss vs. temperature @ 900 mhz broadband gain & return loss @ 900 mhz gain vs. temperature @ 900 mhz p1db vs. temperature @ 900 mhz psat vs. temperature @ 900 mhz hmc789st89e v01.0710 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz -25 -15 -5 5 15 25 0.4 0.6 0.8 1 1.2 1.4 s21 s11 s22 response (db) frequency (ghz) 10 12 14 16 18 20 22 24 0.7 0.8 0.9 1 1.1 +25 c +85 c - 40 c gain (db) frequency (ghz) -20 -15 -10 -5 0 0.7 0.8 0.9 1 1.1 +25 c +85 c - 40 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0.7 0.8 0.9 1 1.1 +25 c +85 c - 40 c return loss (db) frequency (ghz) 20 21 22 23 24 25 26 0.7 0.8 0.9 1 1.1 +25 c +85 c - 40 c p1db (dbm) frequency (ghz) 22 23 24 25 26 27 28 0.7 0.8 0.9 1 1.1 +25 c +85 c - 40 c psat (dbm) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 3 output ip3 vs. temperature @ 900 mhz pout = 10 dbm each tone output ip3 vs. output power @ 900 mhz noise figure vs. temperature @ 900 mhz gain, power & ip3 vs. supply voltage @ 900 mhz reverse isolation vs. temperature @ 900 mhz power compression @ 900 mhz hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz 30 35 40 45 50 0.7 0.8 0.9 1 1.1 +25 c +85 c - 40 c ip3 (db) frequency (ghz) 30 35 40 45 50 0 2 4 6 8 10 12 14 16 18 +25 c +85 c - 40 c ip3 (db) single tone pout (dbm) 0 2 4 6 8 0.75 0.8 0.85 0.9 0.95 1 +25 c +85 c - 40 c nf (db) frequency (ghz) -40 -30 -20 -10 0 0.7 0.8 0.9 1 1.1 +25 c +85 c - 40 c isolation (db) frequency (ghz) 10 20 30 40 50 4.5 5 5.5 gain p1db oip3 gain (db), p1db (d bm), oip3 (dbm) supply voltage 0 10 20 30 40 50 -8 -4 0 4 8 12 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 4 acpr vs. supply voltage @ 880 mhz cdma is95, 9 channels forward input return loss vs. temperature @ 1900 mhz output return loss vs. temperature @ 1900 mhz broadband gain & return loss @ 1900 mhz gain vs. temperature @ 1900 mhz hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz -90 -80 -70 -60 -50 -40 -30 -20 0 2 4 6 8 10 12 14 16 18 20 22 acpr (dbc) channel power (dbm) source acpr cdma is95 frequency: 880 mhz integration bw: 1.228 mhz forward link, 9 channels 5v 5.5v 4.5v -20 -10 0 10 20 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 s21 s11 s22 response (db) frequency (ghz) 10 12 14 16 1.7 1.8 1.9 2 2.1 +25 c +85 c - 40 c gain (db) frequency (ghz) -16 -12 -8 -4 0 1.7 1.8 1.9 2 2.1 +25 c +85 c - 40 c return loss (db) frequency (ghz) -20 -15 -10 -5 0 1.7 1.8 1.9 2 2.1 +25 c +85 c - 40 c return loss (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 5 output ip3 vs. temperature @ 1900 mhz noise figure vs. temperature @ 1900 mhz reverse isolation vs. temperature @ 1900 mhz hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz p1db vs. temperature @ 1900 mhz psat vs. temperature @ 1900 mhz output ip3 vs. output power @ 1900 mhz 22 23 24 25 26 27 28 1.7 1.8 1.9 2 2.1 +25 c +85 c - 40 c p1db (dbm) frequency (ghz) 24 25 26 27 28 29 30 1.7 1.8 1.9 2 2.1 +25 c +85 c - 40 c psat (dbm) frequency (ghz) 30 35 40 45 50 1.7 1.8 1.9 2 2.1 +25 c +85 c - 40 c ip3 (db) frequency (ghz) 30 35 40 45 50 0 2 4 6 8 10 12 14 16 18 +25 c +85 c - 40 c ip3 (db) single tone pout (dbm) 0 2 4 6 8 1.7 1.8 1.9 2 2.1 +25 c +85 c - 40 c nf (db) frequency (ghz) -30 -25 -20 -15 -10 1.7 1.8 1.9 2 2.1 +25 c +85 c - 40 c isolation (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 6 gain, power & ip3 vs. supply voltage @ 1900 mhz acpr vs. supply voltage @ 1960 mhz cdma 2000, 9 channels forward power compression @ 1900 mhz hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz broadband gain & return loss @ 2600 mhz gain vs. temperature @ 2600 mhz acpr vs. supply voltage @ 2140 mhz w-cdma, 64 dpch 10 20 30 40 50 4.5 5 5.5 gain p1db oip3 gain (db), p1db (d bm), oip3 (dbm) supply voltage 0 10 20 30 40 50 -1 3 7 11 15 19 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -90 -80 -70 -60 -50 -40 -30 -20 1 3 5 7 9 11 13 15 17 19 21 acpr (dbc) channel power (dbm) source acpr cdma 2000 frequency: 1960 mhz integration bw: 1.228 mhz forward link, 9 channels 5v 5.5v 4.5v -80 -70 -60 -50 -40 -30 -20 0 2 4 6 8 10 12 14 16 18 20 acpr (dbc) channel power (dbm) source acpr w-cdma frequency: 2140 mhz integration bw: 3.84 mhz 64 dpch 5v 5.5v 4.5v -20 -10 0 10 20 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 s21 s11 s22 response (db) frequency (ghz) 8 9 10 11 12 13 14 2.3 2.4 2.5 2.6 2.7 2.8 +25 c +85 c - 40 c gain (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 7 output ip3 vs. temperature @ 2600 mhz output ip3 vs. output power @ 2600 mhz hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz input return loss vs. temperature @ 2600 mhz output return loss vs. temperature @ 2600 mhz p1db vs. temperature @ 2600 mhz psat vs. temperature @ 2600 mhz -25 -20 -15 -10 -5 0 2.3 2.4 2.5 2.6 2.7 2.8 +25 c +85 c - 40 c return loss (db) frequency (ghz) -20 -15 -10 -5 0 2.3 2.4 2.5 2.6 2.7 2.8 +25 c +85 c - 40 c return loss (db) frequency (ghz) 22 23 24 25 26 2.3 2.4 2.5 2.6 2.7 2.8 +25 c +85 c - 40 c p1db (dbm) frequency (ghz) 22 23 24 25 26 27 28 2.3 2.4 2.5 2.6 2.7 2.8 +25 c +85 c - 40 c psat (dbm) frequency (ghz) 30 35 40 45 50 2.3 2.4 2.5 2.6 2.7 2.8 +25 c +85 c - 40 c ip3 (db) frequency (ghz) 30 35 40 45 50 0 2 4 6 8 10 12 14 16 18 +25 c +85 c - 40 c ip3 (db) single tone pout (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 8 noise figure vs. temperature @ 2600 mhz reverse isolation vs. temperature @ 2600 mhz power compression @ 2600 mhz gain, power & ip3 vs. supply voltage @ 2600 mhz hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz 0 2 4 6 8 2.3 2.4 2.5 2.6 2.7 2.8 +25 c +85 c - 40 c nf (db) frequency (ghz) -25 -20 -15 -10 2.3 2.4 2.5 2.6 2.7 2.8 +25 c +85 c - 40 c isolation (db) frequency (ghz) 10 20 30 40 50 4.5 5 5.5 gain p1db oip3 gain (db), p1db (d bm), oip3 (dbm) supply voltage 0 10 20 30 40 0 5 10 15 20 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 9 hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz outline drawing p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] h mc 789 s t89 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h789 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c package information absolute maximum ratings c ollector bias v oltage ( v cc) +6.0 v rf i nput p ower ( rfin )( v s +5 v dc) +18 dbm junction temperature 150 c c ontinuous p diss (t = 85 c ) (derate 13.0 mw/ c above 85 c ) 0.85 w thermal r esistance (junction to ground paddle) 77 c /w s torage temperature -65 to +150 c o perating temperature -40 to +85 c elec t ros tat ic sensi t ive d evice o b serve ha n d lin g prec aut ions no tes: 1. p a ck ag e bo dy m aterial : molding compound mp -180 s or e quiv alen t. 2. lead m aterial : c u w/ ag spo t pl ating. 3. lead pl atin g: 100% m atte tin. 4. d imensions are in inches [millimet ers] 5. d imension does no t include moldfla sh of 0.15mm per side. 6. d imension does no t include moldfla sh of 0.25mm per side. 7. a ll g round leads mus t be soldere d t o pcb rf g roun d.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 10 pin descriptions p in n umber f unction description i nterface s chematic 1 rfin this pin is d c coupled. o ff chip matching components are required. s ee application c ircuit herein. 3 rfo ut rf output and d c bias input for the amplifer. o ff chip matching components are required. s ee application c ircuit herein. 2, 4 g n d these pins & package bottom must be connected to rf /d c ground. hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 11 hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz 900 mhz application circuit this circuit was used to specify the performance for 810-960 m hz operation. c ontact the h mc applications group for assistance in optimizing performance for your application. r ecommended c omponent v alues c1 10 p f c2 100 p f c3 100 p f c4 1000 p f c5 2.2 f c6 100 p f c7 1.2 p f l1 18 nh l2 3.8 nh
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 12 900 mhz evaluation pcb the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for 900 mhz evaluation pcb 126222 [1] i tem description j1 - j2 pc b m ount sm a c onnector j3 2 mm d c header c 1 10 p f c apacitor, 0402 p kg. c 2 100 p f c apacitor, 0402 p kg. c 3 100 p f c apacitor, 0402 p kg. c 4 1000 p f c apacitor, 0402 p kg. c 5 2.2 f c apacitor, tantalum c 6 100 p f c apacitor, 0402 p kg. c 7 1.2 p f c apacitor, 0402 p kg. l 1 18 nh i nductor, 0402 p kg. l 2 3.8 nh i nductor, 0402 p kg. u1 hmc789s t89e l inear amplifer pc b [2] 126220 e valuation pc b [1] r eference this number when ordering complete evaluation pc b [2] c ircuit board m aterial: r ogers 4350 or arlon 25 fr hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 13 hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz 1900 mhz application circuit this circuit was used to specify the performance for 1710-1990 m hz operation. c ontact the h mc applications group for assistance in optimizing performance for your application. r ecommended c omponent v alues c1 2.2 pf c2 5.0 pf c3 100 p f c4 1000 p f c5 2.2 f c6 20 pf c7 1.1 p f l1 20 nh r1 0.0 ohm
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 14 1900 mhz evaluation pcb the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for 1900 mhz evaluation pcb 126223 [1] i tem description j1 - j2 pc b m ount sm a c onnector j3 2 mm d c header c 1 2.2 p f c apacitor, 0402 p kg. c 2 5.0 p f c apacitor, 0402 p kg. c 3 100 p f c apacitor, 0402 p kg. c 4 1000 p f c apacitor, 0402 p kg. c 5 2.2 f c apacitor, tantalum c 6 20 p f c apacitor, 0402 p kg. c 7 1.1 p f c apacitor, 0402 p kg. l 1 18 nh i nductor, 0402 p kg. r 1 0.0 o hm r esistor, 0402 p kg. u1 hmc789s t89e l inear amplifer pc b [2] 126220 e valuation pc b [1] r eference this number when ordering complete evaluation pc b [2] c ircuit board m aterial: r ogers 4350 or arlon 25 fr hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 15 hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz 2600 mhz application circuit this circuit was used to specify the performance for 2420-2700 m hz operation. c ontact the h mc applications group for assistance in optimizing performance for your application. r ecommended c omponent v alues c1 1.5 p f c2 1.5 p f c3 100 p f c4 1000 p f c5 2.2 f c6 20 pf c7 0.3 pf l1 18 nh l2 12 nh r1 0.0 ohm
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - driver & g a in block - sm t 8 8 - 16 2600 mhz evaluation pcb the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for 2600 mhz evaluation pcb 125682 [1] i tem description j1 - j2 pc b m ount sm a c onnector j3 2 mm d c header c 1 1.5 p f c apacitor, 0402 p kg. c 2 1.5 p f c apacitor, 0402 p kg. c 3 100 p f c apacitor, 0402 p kg. c 4 1000 p f c apacitor, 0402 p kg. c 5 2.2 f c apacitor, tantalum c 6 20 p f c apacitor, 0402 p kg. c 7 0.3 p f c apacitor, 0402 p kg. l 1 18 nh i nductor, 0402 p kg. r 1 0.0 o hm r esistor, 0402 p kg. u1 hmc789s t89e l inear amplifer pc b [2] 125220 e valuation pc b [1] r eference this number when ordering complete evaluation pc b [2] c ircuit board m aterial: r ogers 4350 or arlon 25 fr hmc789st89e v00.0409 ingap hbt gain block mmic amplifier, 0.7 - 2.8 ghz


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